Infineon sic mosfets

Silicon Carbide SiC power transistors open up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability, infineon sic mosfets. Our range of products is available in discrete housing as well as modules in V, V, V and V voltage classes.

Our experts understand what is needed to reduce system complexity, leading to decreased system cost and size in mid- to high-power systems. This forum has been an exciting event for many years, bringing together experts from the fields of SiC and GaN. Just take a look at the agenda and register today! With our extensive product portfolio, meeting the highest quality standards, long system lifetime and reliability are guaranteed. Turn to Infineon, the trusted SiC-supplier, and become part of a revolution to rely on - independent of your individual design, as well as sytem requirements. Today the company offers one of the most comprehensive power portfolios in the industry — ranging from ultra-low to high-voltage power devices.

Infineon sic mosfets

Our overall goal is to combine the low R DS on offered by silicon carbide MOSFETs with an gate drive mode in which the device operates in the safe oxide field-strength conditions. Consequently, it was decided to focus on trench-based devices moving away from a planar surface with high-defect density towards more favorable surface orientations. The latter enabling a low channel resistance at low oxide fields. These boundary conditions are the baseline for transferring quality assurance methodologies established in the silicon power semiconductor world in order to guarantee FIT rates expected in industrial and even automotive applications. SiC devices operate at much higher drain-induced electric fields in the blocking mode compared to their Si counterparts MV instead of kV. Thus, high electric fields in the oxide in the on-state AND off state can potentially accelerate the wear-out. For off state stress protection by deep p-regions is adopted, for on-state a thick oxide is used in order to circumvent the limits to screen remaining extrinsic oxide defects for thin oxides. Additionally, for all variants a low on-resistance, stable and reproducible even in mass production, is achieved. Infineon once again demonstrates that we continue to strive for innovation and technology leadership — also in the WBG arena. What we offer and the way we offer it, differentiates us. Thus, it can be used as a freewheeling diode. However, due to the bandgap of SiC, the knee voltage of this diode is relatively high around 3 V.

Ask the Community. Power management solutions for ultra-high density USB-C adapters and on-board chargers.

When Silicon Carbide SiC semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies while also supporting high. In addition, Silicon Carbide SiC power modules can be tailored to different application needs and are available in topologies from For example, our Easy modules with a high-performance aluminum nitride AlN ceramic significantly improve the thermal performance of R thJH. First portfolio of the generation of M1H Easy and 62mm modules are already available, orderable and registerable. Complete launch will be finished within calendar year In case of questions please get in contact with your sales representative or distribution.

Our overall goal is to combine the low R DS on offered by silicon carbide MOSFETs with an gate drive mode in which the device operates in the safe oxide field-strength conditions. Consequently, it was decided to focus on trench-based devices moving away from a planar surface with high-defect density towards more favorable surface orientations. The latter enabling a low channel resistance at low oxide fields. These boundary conditions are the baseline for transferring quality assurance methodologies established in the silicon power semiconductor world in order to guarantee FIT rates expected in industrial and even automotive applications. SiC devices operate at much higher drain-induced electric fields in the blocking mode compared to their Si counterparts MV instead of kV.

Infineon sic mosfets

Know more. But why is this technology so fascinating to engineers? Our blog will provide some insights. Thus, solutions which up to now have only been feasible in the low-voltage world with voltages of V and below are now possible at higher voltages as well. The results are highest efficiency, higher switching frequencies, less heat dissipation, and space savings — benefits that, in turn, also reduce the overall system cost. We identified this potential almost 30 years ago and established a team of experts in to develop SiC diodes and transistors for high-power industrial applications. Here is a short and incomplete list of milestones reached since:. But why? What is so fascinating about silicon carbide in contrast to traditional silicon? And what makes SiC components so attractive to engineers that they use them so frequently in their designs despite their higher costs compared to silicon high-voltage devices?

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Infineon offers trusted expertise in all 3 main power semiconductor technologies. Read about how Silicon carbide SiC transistors are increasingly used in power converters, placing high demands on the size, weight and efficiency. The outstanding material properties of SiC enable the design of fast switching unipolar devices as opposed to bipolar IGBT devices. Benefits Higher frequency operation Increased power density Highest efficiency for reduced cooling effort Reduce system and operational cost. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements. For example, our Easy modules with a high-performance aluminum nitride AlN ceramic significantly improve the thermal performance of R thJH. This is the revolution you can rely on. This assumption originates in the physical understanding of Si-based power devices, but neglects specific properties of power devices based on SiC. Cosmic ray stability is usually achieved by optimizing the electric field distribution in the drift zone. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years. Turn to Infineon, the trusted SiC-supplier, and become part of a revolution to rely on - independent of your individual design, as well as sytem requirements. Login and learn how to determine the best design for your application. Watch eLearning. Click here to better understand the silicon carbide related reliability. Cold Split Technology.

Silicon Carbide SiC power transistors open up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability. Our range of products is available in discrete housing as well as modules in V, V, V and V voltage classes. Infineon Developer Community is available 24x7 for you to connect and network with engineers across the globe.

Additional Documents. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements. The result is even lower switching losses than for TOpin version, especially at higher currents and higher switching frequencies. Consequently, it was decided to focus on trench-based devices moving away from a planar surface with high-defect density towards more favorable surface orientations. Cold Split Technology. Just take a look at the agenda and register today! Whitepaper — Reliability of SiC based power semiconductors. Introduction to SiC reliability. An additional Schottky diode is not required. Learn about the motivation behind paralleling SiC MOSFET modules, what are the key challenges and solutions for both gate driver and power layout design and get familiar with optimized system loop inductance to minimize switching losses.